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Journals: All Search type: Headers and abstract Search terms: H von Känel Date range: All
Your search has found 13 matching articles. Displaying articles 1 to 10:
 
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Gate-controlled rectifying barrier in a two-dimensional hole gas
R Sordan, A Miranda, J Osmond, D Colombo, D Chrastina, G Isella and H von Känel
Nanotechnology 19 No 33 (20 August 2008) 335201 (4pp)
Abstract  |  References Full text:  Acrobat PDF (385 KB)
SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity
M Stoffel, A Malachias, T Merdzhanova, F Cavallo, G Isella, D Chrastina, H von Känel, A Rastelli and O G Schmidt
Semicond. Sci. Technol. 23 No 8 (August 2008) 085021 (6pp)
Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (1.66 MB)
A new method of investigating the quantum channel surface
I B Berkutov, V V Andrievskii, Yu F Komnik, D R Leadley, M Myronov, H von Känel and O A Mironov
J. Phys.: Condens. Matter 20 No 22 (4 June 2008) 224024 (4pp)
Abstract  |  References Full text:  Acrobat PDF (211 KB)
Heterojunction photodiodes fabricated from Ge/Si (1 0 0) layers grown by low-energy plasma-enhanced CVD
G Isella, J Osmond, M Kummer, R Kaufmann and H von Känel
Semicond. Sci. Technol. 22 No 1 (January 2007) S26-S28
Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (181 KB)
Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells
R Ginige, B Corbett, M Modreanu, C Barrett, J Hilgarth, G Isella, D Chrastina and H von Känel
Semicond. Sci. Technol. 21 No 6 (June 2006) 775-780
Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (867 KB)  |  HTML
Investigation of the injection velocity of holes in strained Si pMOSFETs
G Nicholas, T J Grasby, E H C Parker, T E Whall, D J Paul, A G R Evans and H von Känel
Semicond. Sci. Technol. 20 No 5 (May 2005) L20-L22
Abstract  |  References Full text:  Acrobat PDF (76.8 KB)  |  HTML
The electronic configuration of Fe in
M Fanciulli, C Rosenblad, G Weyer, A Svane, N E Christensen, H von Känel and C O Rodriguez
J. Phys.: Condens. Matter 9 No 7 (17 February 1997) 1619-1630
Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (202 KB)  |  PostScript (155 KB)
Self-organized layered structure in epitaxially stabilized FeSi
M. Fanciulli, G. Weyer, J. Chevallier, H. von Känel, H. Deller, N. Onda, L. Miglio, F. Tavazza and M. Celino
Europhys. Lett. 37 No 2 (10 January 1997) 139-144
Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (863 KB)  |  HTML
Atomic scale variations of the STM tunneling distribution observed by ballistic-electron-emission microscopy
H Sirringhaus, T Meyer, E Y Lee and H von Känel
Phys. Scr. T66 T66 (1996) 282-286
Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (747 KB)
Conversion electron Mössbauer spectroscopy study of iron silicide films grown by MBE;
M Fanciulli, G Weyer, H von Känel and N Onda
Phys. Scr. T54 T54 (1994) 16-19
Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (371 KB)
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