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Your search has found 6 matching articles. Displaying articles 1 to 6:

	Langmuir probe plasma parameters and kinetic rates in a Ar–SiH4–H2 plasma during nc-Si films deposition for photovoltaic applications T Moiseev, G Isella, D Chrastina and C Cavallotti J. Phys. D: Appl. Phys. 42 No 22 (21 November 2009) 225202 (8pp) Abstract  |  References Full text:  Acrobat PDF (236 KB)
	Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate S Bietti, S Sanguinetti, C Somaschini, N Koguchi, G Isella, D Chrastina and A Fedorov IOP Conf. Ser.: Mater. Sci. Eng. 6 (2009) 012009 (4pp) Abstract  |  References Full text:  Acrobat PDF (396 KB)
	Threshold ionization mass spectrometry in the presence of excited silane radicals T Moiseev, D Chrastina, G Isella and C Cavallotti J. Phys. D: Appl. Phys. 42 No 7 (7 April 2009) 072003 (5pp) Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (144 KB)
	Gate-controlled rectifying barrier in a two-dimensional hole gas R Sordan, A Miranda, J Osmond, D Colombo, D Chrastina, G Isella and H von Känel Nanotechnology 19 No 33 (20 August 2008) 335201 (4pp) Abstract  |  References Full text:  Acrobat PDF (385 KB)
	SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity M Stoffel, A Malachias, T Merdzhanova, F Cavallo, G Isella, D Chrastina, H von Känel, A Rastelli and O G Schmidt Semicond. Sci. Technol. 23 No 8 (August 2008) 085021 (6pp) Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (1.66 MB)
	Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells R Ginige, B Corbett, M Modreanu, C Barrett, J Hilgarth, G Isella, D Chrastina and H von Känel Semicond. Sci. Technol. 21 No 6 (June 2006) 775-780 Abstract  |  References  |  Citing articles Full text:  Acrobat PDF (867 KB)  |  HTML

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