Microstructure of quantum dots ensembles by EXAFS spectroscopy

doi:10.1088/1742-6596/190/1/012131

Microstructure of quantum dots ensembles by EXAFS spectroscopy

S B Erenburg et al 2009 J. Phys.: Conf. Ser. 190 012131 (6pp) doi: 10.1088/1742-6596/190/1/012131

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S B Erenburg^1,4, S V Trubina¹, N V Bausk¹, A V Dvurechenskii², A I Nikiforov², V G Mansurov², K S Zhuravlev² and S G Nikitenko³
¹ Nikolaev Institute of Inorganic Chemistry SB RAS, Lavrentiev ave. 3, Novosibirsk 630090, Russia
² Institute of Semiconductors Physics SB RAS, Lavrentiev ave. 13, Novosibirsk 630090
³ NOSR (NOW), DUBBLE at ESRF, BP 220, 38043 Grenoble CEDEX 9, France
⁴ Erenburg S.B., Nikolaev Institute of Inorganic Chemistry, Lavrentiev ave. 3, 630090, Novosibirsk, Russia
E-mail: simon@che.nsk.su

Abstract. We investigate the microstructure of Ge/Si and GaN/AlN sandwiches containing vertically aligned QDs. The study establishes an influence of blocking layers (Si, AlN) thickness, number of QDs layers (Ge, GaN) in heterostructure and annealing temperature on the microstructure characteristics of systems with quantum dots.

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Microstructure of quantum dots ensembles by EXAFS spectroscopy

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