Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure

doi:10.1088/1742-6596/190/1/012116

Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure

H Ofuchi et al 2009 J. Phys.: Conf. Ser. 190 012116 (4pp) doi: 10.1088/1742-6596/190/1/012116

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H Ofuchi¹, S Toyoda^2,3,4, K Ikeda⁵, G L Liu⁵, Z Liu⁵ and M Oshima^2,3,4
¹ Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679–5198, Japan
² Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113–8656, Japan
³ Core Research for Evolutional Science and Technology of Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102–0075, Japan
⁴ Synchrotron Radiation Research Organization, University of Tokyo, Bunkyo-ku, Tokyo 113–8656, Japan
⁵ Semiconductor Technology Academic Research Center, Kohoku-ku, Kanagawa 222-0033, Japan
E-mail: ofuchi@spring8.or.jp

Abstract. Geometric structures for HfSiON/SiON/Si films annealed at various N₂ gas partial pressures were investigated using fluorescence XAFS measurement at Hf L_III- and L_I-edge. The XAFS analysis has revealed that the local structures around the Hf atoms strongly depend on the N₂ gas partial pressure. For the sample annealed at the N₂ gas partial pressure of 10 Torr HfN and HfSiON coexist, and for the samples annealed at the N₂ gas partial pressure above 100 Torr Hf atoms form HfSiON only. These results indicate that the formation of HfN for HfSiON/SiON/Si films can be suppressed by annealing at proper partial pressure of N₂ gas.

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Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure

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