Growth temperature dependence on local structures of Fe0.05Si0.95 diluted magnetic semiconductors studied by X-ray absorption near-edge structure

doi:10.1088/1742-6596/190/1/012106

Growth temperature dependence on local structures of Fe_0.05Si_0.95 diluted magnetic semiconductors studied by X-ray absorption near-edge structure

Yong Jiang et al 2009 J. Phys.: Conf. Ser. 190 012106 (4pp) doi: 10.1088/1742-6596/190/1/012106

PDF (436 KB) | References

Yong Jiang^1,3, Qinghua Liu¹, Tao Yao¹, Jian Ye¹, Qinghua Jiang¹, H Oyanagi² and Shiqiang Wei^1,3
¹ National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P.R. China
² Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305–8568, Japan
³ Authors to whom any correspondence should be addressed.
E-mail: sqwei@ustc.edu.cn and hanyanjy@mail.ustc.edu.cn

Abstract. X-ray absorption near-edge structure (XANES) spectroscopy was used to investigate the local structures of Fe_0.05Si_0.95 diluted magnetic semiconductors (DMSs) thin film deposited by radio-frequency (RF) reactive magnetron co-sputtering device at temperatures of room-temperature (RT), 473K and 573K. Using the ab inito self-consistent real-space multiple-scattering approach, the experimental XANES spectra can be well reproduced by the theoretical calculation curves. The results indicate that the majority of Fe atoms are located at Si substitutional sites Fe_Si in Fe_0.05Si_0.95 at the room temperature. Upon increasing the temperature to 473 and 573 K, the majority of Fe atoms tend to form the FeSi₂ compound.

Post to CiteUlike |

Post to Connotea |

Post to Bibsonomy

Growth temperature dependence on local structures of Fe_0.05Si_0.95 diluted magnetic semiconductors studied by X-ray absorption near-edge structure

Find related articles

Article options

Authors & Referees