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Origin of oxygen vacancies in resistive switching memory devices

B P Andreasson et al 2009 J. Phys.: Conf. Ser. 190 012074 (6pp)   doi: 10.1088/1742-6596/190/1/012074  Help

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B P Andreasson1, M Janousch1, U Staub1, G I Meijer2, A Ramar3,4, J Krbanjevic3 and R Schaeublin3
1 Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
2 IBM Research, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
3 Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherche en Physique des Plasmas, Association Euratom-Confédération Suisse, 5332 Villigen PSI, Switzerland
4 Present address: Center for Electron Nanoscopy, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
E-mail: pererik.andreasson@psi.ch

Abstract. The resistive switching state in Cr-doped SrTiO3 was induced by applying an electric field. This was done in ambient air and in an atmosphere of H2/Ar. The distribution of the thereby introduced oxygen vacancies was studied by spatially resolved X-ray fluorescence images. It was concluded that the oxygen vacancies were introduced in the interface between the SrTiO3 and the positively biased electrode.

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