journals.iop.org home page electronic journals * User guide   * Site map   | Quick Search:Help  
Modelling and Simulation in Materials Science and Engineering
Athens/Institutional login
IOP login: Password:   
Create account | Alerts | Contact us
Journals Home | Journals List | EJs Extra | This Journal | Search | Authors | Referees | Librarians | User Options | Help |

Defects in semiconductors and oxides: where are the gaps in first principles theory?

Marshall Stoneham 2009 Modelling Simul. Mater. Sci. Eng. 17 084009 (13pp)   doi: 10.1088/0965-0393/17/8/084009  Help

   PDF (233 KB) | References

Marshall Stoneham
Centre for Materials Research, and London Centre for Nanotechnology, Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, UK

Abstract. Defects in semiconductors and oxides have been the subject of some of the most sophisticated approaches to modelling and simulation. The powerful, widely used methods can give the impression that all technologically important materials problems can be addressed reliably. But is this so? This paper looks at some of the gaps in first principles theories and at the situations that still warrant attention. Excited states, non-equilibrium systems and non-adiabatic transitions, the correct handling of different length and time scales and the prediction of characteristically quantum behaviour all present challenges. Whilst the emphasis is on semiconductor and oxide systems, the wider context of materials science points to further issues that should not be overlooked.

Print publication: Issue 8 (December 2009)
Received 7 May 2009, in final form 5 July 2009
Published 23 November 2009

Bookmark and Share Post to CiteUlike | Post to Connotea | Post to Bibsonomy

 

Find related articles





Article options

Authors & Referees

This Month's Paperseprintweb.org - Your address for E prints
 
Content finder
  Full Search
  Help


  
Setup information is available for Adobe Acrobat.
EndNote, ProCite ® and Reference Manager ® are registered trademarks of ISI Researchsoft.
Copyright © Institute of Physics and IOP Publishing Limited 2010.
Use of this service is subject to compliance with the Terms and Conditions of use. In particular, reselling and systematic downloading of files is prohibited.
Help: Cookies | Data Protection. Privacy policy Disclaimer