Abstract. A process is presented to fabricate a coplanar buried metal - - metal junction on the surface. The surface is etched with reactive ion etching (RIE) through a PMMA mask where the junction patterns have been defined using the e-beam technique. The buried AuPd metallic wires of the junction, 200 nm in width and 10 nm in thickness, are fabricated by the lift-off technique. After the RIE step, the difficulties of reaching an electrode separation in the 40 nm range on are also discussed.

Print publication: Issue 2 (June 1996)
Received 19 October 1994, accepted for publication 12 September 1995