Abstract. We propose a new scheme of fabricating molds for UV-nanoimprint lithography (UV-NIL) that is both high resolution and has a high aspect ratio. The scheme involves the utilization of a hydrogen silsesquioxane (HSQ) electron beam resist for high resolution patterning and the sputter-deposited α-Si layer that defines the high-aspect-ratio mold pattern obtained from the high etch selectivity between the HSQ and the α-Si. We obtained high resolution line patterns and dot patterns with feature sizes of 40 nm and 25 nm, respectively. The aspect ratio of the patterns was about 3.5 for line patterns and about 5 for dot patterns. These molds also demonstrate successful UV-nanoimprint patterning.

Print publication: Issue 49 (9 December 2009)
Received 3 August 2009, in final form 19 October 2009
Published 6 November 2009