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Nanostructures in high-performance (GeTe)x(AgSbTe2)100−x thermoelectric materials

S H Yang et al 2008 Nanotechnology 19 245707 (5pp)   doi: 10.1088/0957-4484/19/24/245707  Help

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S H Yang1, T J Zhu1, T Sun2, J He3, S N Zhang1 and X B Zhao1
1 State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
2 Ceramics Lab, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
3 Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, USA
E-mail: zhutj@zju.edu.cn (T J Zhu)

Abstract. The thermoelectric properties of (GeTe)x(AgSbTe2)100−x compounds (x = 75, 80, 85 and 90; TAGS-x) have been studied as a function of temperature from 300 to 720 K. At 720 K the dimensionless figure of merit ZT reaches the state-of-the-art value of 1.53 for TAGS-75 and 1.50 for TAGS-80 and TAGS-85 samples, respectively. But the ZT value of the TAGS-90 sample is only 0.50 at 720 K due to the high carrier concentration. Utilizing high-resolution transmission electron microscope and selected area electron diffraction techniques, we identify a considerable number of nanoscale domains with typical size ~10 nm in the samples that show high ZT values. It is suggested that the presence of nanoscale domains, like the situation in PbTe–AgSbTe2 compounds, should make a slight contribution to the low lattice thermal conductivity of TAGS compounds due to the enhanced mid-frequency phonon scattering.

Print publication: Issue 24 (18 June 2008)
Received 14 February 2008, in final form 10 April 2008
Published 12 May 2008

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