Abstract. We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p–n junction model is generally not applicable to this kind of device structure.

Print publication: Issue 23 (13 June 2007)
Received 23 March 2007
Published 16 May 2007