Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc
technique

doi:10.1088/0957-4484/16/12/057

Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique

X H Ji et al 2005 Nanotechnology 16 3069-3073 doi: 10.1088/0957-4484/16/12/057

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X H Ji, S P Lau, H Y Yang and S F Yu
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore
E-mail: esplau@ntu.edu.sg

Abstract. We report the synthesis of aligned wurtzite InN nanofingers by the ion-beam assisted filtered cathodic vacuum arc technique. InN nanofingers exhibit a polycrystalline structure. Photoluminescence (PL) and field emission properties of the InN nanofingers were studied. The PL emission peak was centred at ~1.1 eV with a full width at half maximum of 105 meV. The field emission characteristic was observed from the InN nanofingers with turn-on field of 9.7 V µm⁻¹ at a current density of 10 µA cm⁻². The formation of InN nanofingers was attributed to the Volmer–Weber growth mode.

Print publication: Issue 12 (December 2005)
Received 2 August 2005, in final form 7 October 2005
Published 7 November 2005

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Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique

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