journals.iop.org home page electronic journals * User guide   * Site map   | Quick Search:Help  
Nanotechnology
Athens/Institutional login
IOP login: Password:   
Create account | Alerts | Contact us
Journals Home | Journals List | EJs Extra | This Journal | Search | Authors | Referees | Librarians | User Options | Help |
< Previous article | Next article * | This volume ^^ | This issue ^ | Content finder *

Cleaved-edge overgrowth of aligned InAs islands on GaAs(110)

C X Cui et al 2005 Nanotechnology 16 2661-2664   doi: 10.1088/0957-4484/16/11/032  Help

   PDF (349 KB) | References

C X Cui, Y H Chen, C Zhao, P Jin, G X Shi, Y L Wang, B Xu and Z G Wang
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China

Abstract. A novel approach for positioning InAs islands on GaAs(110) by cleaved-edge overgrowth is reported. The first growth sample contains a strained InxGa1−xAs /GaAs superlattice of varying indium fraction and thickness, which acts as a strain nanopattern for the cleaved edge overgrowth. The formation of aligned islands is observed by means of atomic force microscopy. The ordering of the aligned islands and the structure of a single InAs island are found to depend on the properties of the underlying InxGa1−xAs /GaAs superlattice and molecular beam epitaxy growth conditions.

Print publication: Issue 11 (November 2005)
Received 22 April 2005, in final form 4 August 2005
Published 30 September 2005

Bookmark and Share Post to CiteUlike | Post to Connotea | Post to Bibsonomy

 


Find related articles





Article options

Authors & Referees

 
< Previous article | Next article * | This volume ^^ | This issue ^
Content finder
  Full Search
  Help


  
Journals Home | Journals List | EJs Extra | This Journal | Search | Authors | Referees | Librarians | User Options | Help | Recommend this journal
Setup information is available for Adobe Acrobat.
EndNote, ProCite ® and Reference Manager ® are registered trademarks of ISI Researchsoft.
Copyright © Institute of Physics and IOP Publishing Limited 2009.
Use of this service is subject to compliance with the terms and conditions of use. In particular, reselling and systematic downloading of files is prohibited.
Help: Cookies | Data Protection.