Abstract. We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C₆₀-based devices, and gate-modulated negative differential resistance (NDR) in 'control' devices that we ascribe to adsorbed contamination. We discuss the need for a statistical approach to device characterization, and the criteria that must be satisfied to infer that transport is based on single molecules. We describe apparent Kondo physics in C₆₀-based single-molecule transistors (SMTs), including signatures of molecular vibrations in the Kondo regime. Finally, we report gate-modulated NDR in devices made without intentional molecular components, and discuss possible origins of this property.

Print publication: Issue 10 (October 2004)
Received 26 January 2004
Published 23 July 2004