Abstract. We demonstrate a high yield production scheme to fabricate sub-5 nm co-planar metal–insulator–metal junctions. This involves determining the relationship between the actual gap between the metallic junctions for a given designed gap, and the use of weak developers with ultrasonic agitation to process the exposed resist. This results in an improved process to achieve narrow inter-electrode gaps. The gaps were imaged using an AFM equipped with a carbon nanotube tip to achieve a high degree of accuracy in measurement. The smallest gap unambiguously measured was ~ 2 nm. Gaps with ≤ 5 nm spacing were produced with a very high yield of about 75% for a designed inter-electrode distance of 0 nm. The leakage resistance of the gaps was found to be of the order of 10¹² Ω. The entire junction structure was designed to be co-planar to better than 1 nm over 1 μ m².

Print publication: Issue 5 (October 2002)
Received 12 August 2002, in final form 4 September 2002
Published 20 September 2002