Abstract. The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of five atom rows. The memory can be initialized and reformatted by controlled deposition of silicon. The writing process involves the transfer of Si atoms to the tip of a scanning tunnelling microscope. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.

Print publication: Issue 4 (August 2002)
Received 29 April 2002
Published 4 July 2002