Microscopic and optical investigation of Ge nanoislands
on silicon  substrates

doi:10.1088/0957-4484/13/1/318

Microscopic and optical investigation of Ge nanoislands on silicon substrates

Z F Krasil'nik et al 2002 Nanotechnology 13 81-85 doi: 10.1088/0957-4484/13/1/318

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Z F Krasil'nik¹, P Lytvyn², D N Lobanov¹, N Mestres³, A V Novikov¹, J Pascual⁴, M Ya Valakh² and V A Yukhymchuk²
¹ Institute of Microstructure Physics, RAS, 603600 Nizhny Novgorod, GSP-105, Russia
² Institute of Semiconductor Physics, NASU, 03028 Kyiv, Ukraine
³ Institut de Ciència de Materials de Barcelona, CSIC, 08193 Bellaterra, Spain
⁴ Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
E-mail: jordi.pascual@uab.es

Abstract. We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.

Print publication: Issue 1 (February 2002)
Received 11 May 2001, in final form 27 September 2001
Published 18 January 2002

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Microscopic and optical investigation of Ge nanoislands on silicon substrates

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