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Can silicon dimers form logic gates?

Ian Appelbaum et al 2001 Nanotechnology 12 391-393   doi: 10.1088/0957-4484/12/3/330  Help

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Ian Appelbaum1,2,4, Tairan Wang1, Shanhui Fan3, J D Joannopoulos1 and V Narayanamurti2
1 Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
2 Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
3 Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
4 Corresponding Author.
E-mail: appeli@mit.edu

Abstract. We have performed density functional theory calculations to show how a tungsten scanning probe can mediate the interactions between bistable Si(100) surface dimers. Interpreting the state of each dimer as a bit of information, we demonstrate the use of this mediated interaction to construct a NOR logic gate.

Print publication: Issue 3 (September 2001)
Received 22 June 2001, in final form 3 August 2001
Published 28 August 2001

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