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LETTER TO THE EDITOR

Hole tunnelling from beryllium acceptors in GaAs

A Dargys et al 1997 J. Phys.: Condens. Matter 9 L557-L559   doi: 10.1088/0953-8984/9/39/004  Help

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A Dargys, N Zurauskiene and K Bertulis
Semiconductor Physics Institute, A Gostauto 11, 2600 Vilnius, Lithuania

Abstract. We present experimental results on the field ionization of beryllium acceptors in micrometre AlGaAs/GaAs structures on a nanosecond timescale. At liquid helium temperature, the tunnelling ionization of beryllium was found to switch on effectively at electric fields higher than .

Print publication: Issue 39 (29 September 1997)
Received 14 July 1997

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