Brillouin scattering study of gallium nitride: elastic stiffness constants

doi:10.1088/0953-8984/9/1/025

Brillouin scattering study of gallium nitride: elastic stiffness constants

M Yamaguchi et al 1997 J. Phys.: Condens. Matter 9 241-248 doi: 10.1088/0953-8984/9/1/025

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M Yamaguchi

, T Yagi

, T Azuhata§, T Sota§, K Suzuki§, S Chichibu|| and S Nakamura¶

Department of Applied Physics, Faculty of Engineering, Hokkaido University, 060 Sapporo, Japan

Research Institute for Electronic Science, Hokkaido University, Sapporo 060, Japan
§ Department of Electrical, Electronics and Computer Engineering, Waseda University, Shinjuku, 169 Tokyo, Japan
|| Faculty of Science and Technology, Science University of Tokyo, 278 Chiba, Japan
¶ Department of Research and Development, Nichia Chemical Industries Ltd., Anan, 774 Tokushima, Japan

Abstract. High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined.

A comparison is given with the results of a recently reported model for calculation of the elastic constants of III - V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.

Print publication: Issue 1 (6 January 1997)
Received 15 May 1996, in final form 13 September 1996

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Brillouin scattering study of gallium nitride: elastic stiffness constants

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