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2006 J. Phys.: Condens. Matter 18 10313-10318 doi: 10.1088/0953-8984/18/46/001
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Abstract. A Datta–Das spin field effect transistor (FET) made of a nonballistic quantum wire with a single transport channel is considered. Although there is no spin relaxation and the spin precession is not influenced by elastic scattering, successful spin FET operation can still be prevented by the conductance fluctuations. The necessary condition for the desired spin FET operation is obtained.
Print publication: Issue 46 (22 November 2006) |
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