Interactions of point defects with dislocations in n-type silicon-doped
GaAs

doi:10.1088/0953-8984/14/34/315

Interactions of point defects with dislocations in n-type silicon-doped GaAs

H Lei et al 2002 J. Phys.: Condens. Matter 14 7963-7971 doi: 10.1088/0953-8984/14/34/315

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H Lei^1,4, H S Leipner^1,4, N Engler² and J Schreiber³
¹ Centre of Material Science, Martin-Luther-Universität Halle-Wittenberg, D-06108 Halle, Germany
² Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
³ Fachbereich Physik, Martin-Luther-Universität Halle-Wittenberg, D-06108 Halle, Germany
E-mail: lei@cmat.uni-halle.de and leipner@cmat.uni-halle.de
⁴ Corresponding authors.

Abstract. Raman scattering and cathodoluminescence experiments have been performed to investigate the effect of dislocations on the spatial distribution of point defects and on the free electron concentration in n-type GaAs:Si. An experimentally extended increase of the free electron and (Si_GaV_Ga)²⁻ complex concentrations from the matrix to the dislocation is explained as resulting from the formation of arsenic precipitates around the dislocation by means of computer simulations based on a diffusion–aggregation model.

Print publication: Issue 34 (2 September 2002)
Received 15 May 2002, in final form 18 June 2002
Published 15 August 2002

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Interactions of point defects with dislocations in n-type silicon-doped GaAs

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