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Isotopically engineered silicon/silicon-germanium nanostructures as basic elements for a nuclear spin quantum computer

I Shlimak et al 2001 J. Phys.: Condens. Matter 13 6059-6065   doi: 10.1088/0953-8984/13/26/319  Help

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I Shlimak1, V I Safarov2 and I D Vagner3,4
1 Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel
2 GPEC Department de Physique, Case 901 Faculté des Sciences de Luminy, Université Aix-Marseille II 13288, Marseille, France
3 Grenoble High Magnetic Field Laboratory, Max Planck Institut FKF, CRNS, F-38042, Cedex 9, Grenoble, France
4 Department of Communication Engineering, Holon Institute of Technology, PO Box 305, Holon 58102, Israel
E-mail: shlimai@mail.biu.ac.il

Abstract. The idea of quantum computation is the most promising recent development in the high-tech domain, while experimental realization of a quantum computer poses a formidable challenge. Among the proposed models especially attractive are semiconductor based nuclear spin quantum computers (S-NSQCs), where nuclear spins are used as quantum bistable elements, `qubits', coupled to the electron spin and orbital dynamics. We propose here a scheme for implementation of basic elements for S-NSQCs which are realizable within achievements of the modern nanotechnology. These elements are expected to be based on a nuclear-spin-controlled isotopically engineered Si/SiGe heterojunction, because in these semiconductors one can vary the abundance of nuclear spins by engineering the isotopic composition. A specific device is suggested, which allows one to model the processes of recording, reading and information transfer on a quantum level using the technique of electrical detection of the magnetic state of nuclear spins. Improvement of this technique for a semiconductor system with a relatively small number of nuclei might be applied to the manipulation of nuclear spin `qubits' in the future S-NSQCs.

Print publication: Issue 26 (2 July 2001)
Received 14 February 2001, in final form 24 April 2001

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