Ultrathin epitaxial MgB2 superconducting films with high critical current density and Tc
above 33 K

doi:10.1088/0953-2048/22/12/125015

Ultrathin epitaxial MgB₂ superconducting films with high critical current density and T_c above 33 K

Yazhou Wang et al 2009 Supercond. Sci. Technol. 22 125015 (4pp) doi: 10.1088/0953-2048/22/12/125015

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Yazhou Wang¹, Chenggang Zhuang^1,2, Xuan Sun¹, Xu Huang¹, Qiang Fu¹, Zhimin Liao¹, Dapeng Yu¹ and Qingrong Feng¹
¹ State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China
² Department of Physics, Temple University, Philadelphia, PA 19122, USA
E-mail: yudp@pku.edu.cn and qrfeng@pku.edu.cn

Abstract. High quality ultrathin MgB₂ superconducting films with thickness down to 7.5 nm have been synthesized via hybrid physical–chemical vapor deposition. The films are phase-pure and oxygen-free. The 7.5 nm thin film shows a T_c(0) of 32.8 K and residual resistivity of 120 µΩ cm, and the 10 nm thin film shows a T_c(0) of 35.5 K and high critical current density J_c~10⁶ A cm⁻² at 20 K.

Print publication: Issue 12 (December 2009)
Received 18 August 2009, in final form 10 September 2009
Published 23 October 2009

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Ultrathin epitaxial MgB₂ superconducting films with high critical current density and T_c above 33 K

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