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Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films

S Patnaik et al 2001 Supercond. Sci. Technol. 14 315-319   doi: 10.1088/0953-2048/14/6/304  Help

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S Patnaik1, L D Cooley1, A Gurevich1, A A Polyanskii1, J Jiang1, X Y Cai1, A A Squitieri1, M T Naus1, M K Lee2, J H Choi2, L Belenky2, S D Bu2, J Letteri3, X Song1,2, D G Schlom3, S E Babcock1,2, C B Eom1,2, E E Hellstrom1,2 and D C Larbalestier1,2
1 Applied Superconductivity Center, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 USA
2 Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI 53706 USA
3 Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA

Abstract. An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2parallel/Hc2 is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H*approx0.8Hc2(T) in untextured samples. Hc2parallel(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.

Print publication: Issue 6 (June 2001)
Received 30 April 2001

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