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Spin-orbit interaction effect in the electronic structure of Bi2Te3 observed by angle-resolved photoemission spectroscopy

H.-J. Noh et al 2008 EPL 81 57006 (6pp)   doi: 10.1209/0295-5075/81/57006  Help

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H.-J. Noh1,2, H. Koh2, S.-J. Oh2, J.-H. Park3, H.-D. Kim4, J. D. Rameau5,6, T. Valla5, T. E. Kidd5, P. D. Johnson5, Y. Hu5 and Q. Li5
1 Department of Physics, Chonnam National University - Gwangju 500-757, Korea
2 School of Physics & Center for Strongly Correlated Materials Research, Seoul National University Seoul 151-742, Korea
3 Department of Physics, Pohang University of Science and Technology - Pohang 790-784, Korea
4 Pohang Accelerator Laboratory, Pohang University of Science and Technology - Pohang 790-784, Korea
5 Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory Upton, NY 11973, USA
6 Department of Physics & Astronomy, Stony Brook University - Stony Brook, NY 11974, USA
E-mail: ffnhj@chonnam.ac.kr

Abstract. The electronic structure of p-type doped Bi2Te3 is studied by angle-resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off the Γ-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of Bi2Te3. A successive time-dependent ARPES measurement also reveals that the electron-like bands crossing EF near the \underline{\Gamma} -point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of Bi2Te3.

PACS numbers: 72.15.Jf, 71.20.Nr, 79.60.-i

Print publication: Issue 5 (March 2008)
Received 23 October 2007, accepted for publication 14 January 2008
Published 12 February 2008

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