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2008 EPL 81 57006 (6pp) doi: 10.1209/0295-5075/81/57006
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Abstract.
The electronic structure of p-type doped Bi2Te3 is studied by angle-resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off the Γ-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of Bi2Te3. A successive time-dependent ARPES measurement also reveals that the electron-like bands crossing EF near the
-point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of Bi2Te3.
PACS numbers: 72.15.Jf, 71.20.Nr, 79.60.-i
Print publication: Issue 5 (March 2008)| Post to CiteUlike | | Post to Connotea | | Post to Bibsonomy |
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