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Superconductivity in high-pressure SiH4

Y. Yao et al 2007 EPL 78 37003 (6pp)   doi: 10.1209/0295-5075/78/37003  Help

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Y. Yao1, J. S. Tse1, Y. Ma2 and K. Tanaka1
1 Department of Physics and Engineering Physics, University of Saskatchewan - Saskatoon, S7N 5E2, Canada
2 National Laboratory of Superhard Materials, Jilin University - Changchun, 130012, PRC

Abstract. A combination of static and dynamical first-principles electronic calculations of silane, SiH4, at high pressure has revealed a novel monoclinic structure with C2/c symmetry. This high-pressure phase is metallic and composed of layers of SiH4 bridged by H bonds. Perturbative linear response calculations at 90 and 125 GPa predict large electron-phonon couplings yielding an electron-phonon coupling parameter λ close to 0.9. The application of McMillan equation gives a superconducting critical temperature (Tc) between 45 and 55 K.

PACS numbers: 74.10.+v, 74.70.Ad, 74.62.Fj

Print publication: Issue 3 (May 2007)
Received 15 December 2006, in final form 23 March 2007
Published 20 April 2007

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