Abstract. Metal-oxide-semiconductor capacitors with a tetralayer structure consisting of nickel nanocrystals sandwiched between SiO₂ and HfO₂ tunnel and Al₂O₃ cap oxides were fabricated on p-Si substrates. Cross-sectional transmission electron micrographs revealed the formation of nickel nanocrystals having size 5–7 nm. The maximum charge injection capability (ΔV_FB ~ 7.8 V; @ ± 15 V) of nanocrystals was observed for the device RTA annealed at 950 °C for a minute. Charge storage and leakage current characteristics of the nanocrystal memory structures were studied through capacitance–voltage and current–voltage measurements, respectively. The improved retention properties with good thermal stability and endurance properties were also studied.

Print publication: Issue 11 (November 2009)
Received 16 July 2009, in final form 19 August 2009
Published 27 October 2009