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Temperature dependence of current–voltage characteristics of terahertz quantum-well photodetectors

Z Y Tan et al 2009 Semicond. Sci. Technol. 24 115014 (4pp)   doi: 10.1088/0268-1242/24/11/115014  Help

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Z Y Tan1, X G Guo1, J C Cao1, H Li1, X Wang1, S L Feng1, Z R Wasilewski2 and H C Liu2
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China
2 Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada
E-mail: jccao@mail.sim.ac.cn

Abstract. We have performed current–voltage (I–V) measurements on a terahertz quantum-well photodetector (QWP) at different temperatures and employed an emission-capture model to simulate the I–V curves. A temperature-dependent vertical electron drift mobility has been used to fit the curves from 7 K to 20 K. Photocurrents caused by 300 K background radiation have also been measured at different temperatures and a background-limited infrared performance (blip) temperature of 12 K for this terahertz detector has been determined. The current–temperature (I–T) curves derived from the measured dark I–V curves indicate that the thermionic emission process is the major mechanism for dark current in this terahertz detector.

Print publication: Issue 11 (November 2009)
Received 4 June 2009, in final form 18 September 2009
Published 20 October 2009

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