Strained-Si modulation doped FETs as detectors of terahertz and sub-terahertz radiation

doi:10.1088/0268-1242/23/10/105001

Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

S L Rumyantsev et al 2008 Semicond. Sci. Technol. 23 105001 (4pp) doi: 10.1088/0268-1242/23/10/105001

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S L Rumyantsev^1,2, K Fobelets³, D Veksler¹, T Hackbarth⁴ and M S Shur¹
¹ Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, USA
² Ioffe Institute of Russian Academy of Sciences, 194021 St Petersburg, Russia
³ Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2BT, UK
⁴ DaimlerChrysler Research Center, Wilhem-Runge Strasse 11, 89081 Ulm, Germany

Abstract. Strained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dimensional electrons in the device channel.

Print publication: Issue 10 (October 2008)
Received 12 May 2008
Published 28 August 2008

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Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

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