Abstract. A Schottky split gate technique is used to form lateral quantum dots in the two-dimensional electron gases of a high-mobility Si/SiGe heterostructure. e-beam defined palladium gates show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing less than 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained Si/SiGe heterostructure.

Print publication: Issue 1 (January 2007)
Received 11 May 2006, in final form 25 August 2006
Published 5 December 2006