Abstract. In this paper, we have used organic/inorganic double gate dielectrics to enhance pentacene growth and dielectric properties for organic thin film transistors (OTFTs). The effects of poly-4-vinylphenol (PVP)/CeO₂–SiO₂ composite double gate dielectrics on the electrical properties of OTFTs have been investigated. The interface of the gate dielectric and organic semiconductor is one of the physical factors which govern the electrical performance of OTFTs and also the growth of pentacene is largely determined by the surface characteristics of the gate dielectric. Here, when a spin-coated organic smoothing dielectric on an inorganic metal oxide dielectric is used, the growth of pentacene and dielectric properties are significantly improved. We were able to manufacture high-quality pentacene TFTs with a mobility of 1.14 cm² (V⁻¹ s⁻¹) and an on/off ratio of 10⁴ at operating voltages of less than 5 V.

Print publication: Issue 8 (August 2006)
Received 19 February 2006, in final form 21 April 2006
Published 20 June 2006