Abstract. Hydrogenation studies in p-GaAs have been performed by fabricating Pd/p-GaAs devices. The devices have been studied by I-V and C-V measurements. Hydrogenation has been found to improve the ideality factor of the diode. The forward C-V characteristics have shown the presence of interfacial deep donors at and , the density of which decreased on hydrogenation. The content of hydrogen in Pd/p-GaAs has been measured both in the semiconducting substrates and the palladium thin film by ERDA using 55 MeV Si ions.

Print publication: Issue 10 (October 1998)
Received 11 November 1997, accepted for publication 3 June 1998