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Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AlGaAs and GaAs p-i-n solar cells

E Grunbaum et al 1995 Semicond. Sci. Technol. 10 627-633   doi: 10.1088/0268-1242/10/5/010  Help

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E Grunbaum, E Napchan, Z Barkay, K Barnham, J Nelson, C T Foxon, J S Roberts and D B Holt
Interdisciplinary Res. Centre for Semicond. Mater., Imperial Coll. of Sci., Technol. & Med., London, UK

Abstract. A new method of determining the minority carrier diffusion length in multilayer solar cells is described. Electron beam-induced current (EBIC) gain measurements, performed in a scanning electron microscope in the planar sample configuration, are compared with values obtained by calculations using a Monte Carlo simulation program of electron trajectories. Values for diffusion lengths obtained by this method from five AlGaAs and GaAs p-i-n and p-n solar cells are compared with values given in the literature.

Print publication: Issue 5 (May 1995)

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