Abstract. Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300 °C. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5 × 10⁻⁴ Ω.cm is obtained from the film annealed at 400 °C in N₂. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.

PACS numbers: 42.25.Fx, 42.70.Km, 78.20.−e

Print publication: Issue 11 (November 2009)
Received 4 January 2009