Abstract. Cu₂O thin films with (111) preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500°ree;C for 45 s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04 eV. The electrical conductivity of grown films was measured around (1.1×10⁻⁵Ω⁻¹cm⁻¹) at 300 K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu₂O obtained by other methods.

PACS numbers: 81.15.Gh, 73.61.-r, 73.50.Lw, 78.66.-w

Print publication: Issue 11 (November 2005)
Received 19 July 2005