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Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure

Petru Lunca-Popa et al 2005 J. Phys. D: Appl. Phys. 38 1248-1252   doi: 10.1088/0022-3727/38/8/023  Help

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Petru Lunca-Popa1,2,3, J I Brand1,2, Snjezana Balaz1,3, Luis G Rosa1,3, N M Boag1,3,4, Mengjun Bai1,2,3, B W Robertson1,2 and P A Dowben1,3,5
1 Center for Materials Research and Analysis, 116 Brace Laboratory, University of Nebraska, PO Box 880111, Lincoln, NE 68588-0111, USA
2 College of Engineering and Technology, N104 Walter Scott Engineering Center, 17th & Vine Streets, University of Nebraska-Lincoln, Lincoln, NE 68588-0656, USA
3 Department of Physics and Astronomy, Behlen Laboratory of Physics, University of Nebraska, PO Box 880111, Lincoln, NE 68588-0111, USA
4 Chemistry and Nanotechnology, Institute for Materials Research, Cockcroft Building, University of Salford, Salford M5 4WT, UK
5 Author to whom any correspondence should be addressed.
E-mail: pdowben@unl.edu

Abstract. Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C2B10H12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C2B10 boron carbide and is consistent with electron diffraction results.

Print publication: Issue 8 (21 April 2005)
Received 5 January 2005
Published 1 April 2005

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