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2004 J. Phys. D: Appl. Phys. 37 1472-1477 doi: 10.1088/0022-3727/37/10/009
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Abstract. Aluminium nitride (AlN) films have been fabricated on Si(100) substrates by an ion-beam-assisted filtered cathodic vacuum arc technique at low temperature. The structural and mechanical properties of the AlN films have been investigated using x-ray photoelectron spectroscopy, by means of an x-ray diffractometer, visible Raman spectroscopy, atomic force microscopy and nanoindentation. The AlN films exhibit a predominant a-axis orientation with hardness as high as 14.5 GPa, which may be suitable for surface acoustic wave devices.
Print publication: Issue 10 (21 May 2004) |
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