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Luminescence excitation characteristics of Ca, Na and K-aluminosilicates (feldspars) in the stimulation range 5–40 eV: determination of the band-gap energies

A E R Malins et al 2004 J. Phys. D: Appl. Phys. 37 1439-1450   doi: 10.1088/0022-3727/37/10/005  Help

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A E R Malins1, N R J Poolton1, F M Quinn1, O Johnsen2 and P M Denby3
1 Synchrotron Radiation Department, Daresbury Laboratory, Daresbury, Warrington WA4 4AD, UK
2 Geological Museum, University of Copenhagen, Øster Voldgade 5–7, 1350 Copenhagen, Denmark
3 Radiation Research Department, Risø National Laboratory, 4000 Roskilde, Denmark

Abstract. The first comprehensive survey of band-edge features in the ternary group of naturally occurring aluminosilicates (the feldspars) is presented. Synchrotron-based luminescence excitation of KAlSi3O8, NaAlSi3O8 and CaAl2Si2O8 allows the measurement of the evolution of the band-gap across the system, which, at 8 K, is found to vary from 7.86 eV in NaAlSi3O8 to 7.7 eV and 7.62 eV in KAlSi3O8 and CaAl2Si2O8, respectively: the band-gap energies are typically 0.1 eV smaller at 300 K. In comparison with measurements made on natural and synthetic hydrothermal α-quartz, where both the direct and indirect band-gap structures are distinctly observable, no significant post-edge band structure is discernable in the feldspars. In Ca-rich material, the luminescence is attenuated by more than two orders of magnitude for excitation energies up to 3 eV above the band-gap, partly supporting the proposition (derived from previous cyclotron resonance experiments) that the bands are simply parabolic and that the materials may be direct band-gap insulators. The luminescence excitation experiments also allow an initial survey to be made of sub-band-gap features in the materials, including low mobility, temperature sensitive band-tail states and mid-gap defects.

Print publication: Issue 10 (21 May 2004)
Received 15 January 2004
Published 28 April 2004

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