Abstract. Tantalum (Ta) diffusion barrier films were deposited on un-patterned and patterned silicon substrates at ambient temperature and without substrate bias by filtered cathodic vacuum arc (FCVA). The films were characterized by atomic force microscopy, scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, four-point resistivity probe and surface profilometer. It was found that the Ta film was 750 Å thick and free of C and O except for surface contamination. The film morphology was smooth and uniform with root-mean-square roughness of ~0.82 Å. The Ta film was polycrystalline β phase with a mean grain size of ~3 nm and possessed a dense microstructure, which are ascribed to the high energy of the condensing species in FCVA. It was shown that the Ta filling of the trenches (0.33 μm wide, 1 : 1 aspect ratio) was very conformal and quite uniform. Also, it was preliminarily found that at the Ta film was effective against diffusion of Cu into Si at 600°C.

Print publication: Issue 11 (7 June 2003)
Received 17 March 2003
Published 14 May 2003