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2002 J. Phys. D: Appl. Phys. 35 3052-3059 doi: 10.1088/0022-3727/35/23/304
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Abstract. We design an N-cell anti-reflection coating for electron transport through an arbitrary periodic semiconductor heterostructure. Stability conditions are derived which allow one to make an Nth order zero of the reflection amplitude at the design energy. Examples are given for up to N = 4 cells, showing that 95% average transmissivity can be obtained.
Print publication: Issue 23 (07 December 2002) |
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