Abstract. This paper describes a nondestructive method to determine the sheet carrier density of pseudomorphic high electron mobility transistor structures by fitting the room-temperature photoluminescence (PL) spectra. The sheet carrier densities determined were in sufficiently good agreement with values determined by Hall measurements for different samples with different mole fractions, -doping densities and well widths. For single-doped AlGaAs/InGaAs quantum wells, the dominant emission is the transitions from the first electron subband to the first heavy hole subband, from the first electron subband to the second heavy hole subband, and from the second electron subband to the first heavy hole subband.

Print publication: Issue 2 (21 January 1998)
Received 11 November 1996, in final form 30 May 1997